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SSM3K35MFV

Teil Nr. SSM3K35MFV
Hersteller Toshiba Semiconductor and Storage
Katalog Electronic Wholesale
Beschreibung High-Speed Switching Applications Analog Switch Applications
Muster
Rohs-status rohs
ECAD-module
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Hersteller Toshiba Semiconductor and Storage
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 1259518-SSM3K35MFV
Hersteller Homepage www.semicon.toshiba.co.jp/eng
Popularität Medium
Gefälschte Bedrohung auf dem freien Markt 35 pct.
Stand von Angebot und Nachfrage Sufficient
Ultra Librarian 3D-Modell Ultra Librarian SSM3K35MFV CAD-Modell

Beschreibung

The SSM3K35MFV is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. It is designed for load switch applications, DC-DC converters, and other power management circuits. This MOSFET features a low on-resistance, which contributes to high efficiency and reduced power dissipation. Its small package size makes it suitable for portable and space-constrained applications.

Applications

  • Load switch circuits: Used for enabling or disabling power to specific sections of a circuit.
  • DC-DC converters: Employed in voltage regulation and power conversion circuits.
  • Power management in portable devices: Commonly found in smartphones, tablets, and other battery-powered devices.
  • LED lighting: Used in LED drivers for controlling current to LEDs.
  • Battery protection circuits: Helps prevent overcharging or over-discharging of batteries.

Features

  • P-Channel MOSFET: Suitable for low-side switching applications.
  • Low On-Resistance (RDS(on)): Reduces power loss and improves efficiency.
  • Low Gate Charge (Qg): Enables fast switching speeds.
  • Small Package: UFM package for compact designs.
  • Lead-Free: Compliant with RoHS standards.
  • Enhancement Mode: Normally off, requiring a negative gate voltage to turn on.

Benefits

  • High Efficiency: Low on-resistance minimizes power dissipation, increasing efficiency.
  • Fast Switching: Low gate charge allows for quick turn-on and turn-off times.
  • Compact Design: Small package saves board space in portable devices.
  • Simplified Circuit Design: Easy to integrate into various circuit configurations.

Additional Details

The SSM3K35MFV is typically used in applications where space is at a premium. The UFM package is designed for surface mounting and helps to minimize the overall size of the circuit. The low on-resistance (RDS(on)) is a crucial parameter for minimizing power loss, especially in battery-powered applications. The gate-source voltage (VGS) needs to be carefully controlled to ensure that the MOSFET operates within its specified limits. The datasheet provides comprehensive information on absolute maximum ratings, electrical characteristics, and thermal resistance. Thermal management is essential, especially when operating at higher currents. The SSM3K35MFV from Toshiba Semiconductor offers a compact and efficient solution for load switching and power management needs in a wide range of electronic devices. By minimizing on-resistance and offering rapid switching, the SSM3K35MFV enables enhanced efficiency and power conservation across varied applications.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
765+ 0.0655$ 50.1075$
1,860+ 0.0538$ 100.0680$
2,880+ 0.0521$ 150.0480$
3,970+ 0.0504$ 200.0880$
5,125+ 0.0488$ 250.1000$
6,865+ 0.0437$ 300.0005$
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 666,778 Stücke
MOQ: 765 Stück
Inkrement bestellen : 1 pcs
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