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PMEG4002EL,315

Teil Nr. PMEG4002EL,315
Hersteller NXP
Katalog Diodes, Rectifiers - Single
Beschreibung DIODE SCHOTTKY 40V 200MA SOD882
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Kategorien Discrete Semiconductor Products
Hersteller Nexperia USA Inc.
Verpackung Reel - TR
Status Active
Diode Typ Schottky
Spannung - DC Rückwärts (Vr) (Max) 40V
Strom - Durchschnittlich gleichgerichtet (Io) 200mA (DC)
Spannung - Vorwärts (Vf) (Max) @ If 600mV @ 200mA
Strom - Rückwärtsleckstrom @ Vr 10μA @ 40V
Kapazität @ Vr, F 20pF @ 1V, 1MHz
Montage SMD (SMT)
Koffer/Paket DFN1006-2
Betriebstemperatur - Verbindungsstelle 150°C (Max)
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 111641-PMEG4002EL,315
Rohmaterialien Based on silicon element (Si) ; Blue-grey metallic luster
Popularität Medium
Gefälschte Bedrohung auf dem freien Markt 63 pct.
Stand von Angebot und Nachfrage Balance
ECAD-Modelle Contact us to download
Sicherheitsdatenblatt (MSDS) Get Access
Ultra Librarian 3D-Modell Ultra Librarian PMEG4002EL,315 CAD-Modell

Beschreibung

NXP PMEG4002EL,315 Schottky Barrier Diode

The PMEG4002EL,315 from NXP Semiconductors is a high-efficiency, low forward voltage drop Schottky barrier diode that is designed to meet the needs of a wide range of applications. This component is part of NXP's extensive diode portfolio, which is renowned for its high-quality standards and reliability. The PMEG4002EL,315 is particularly well-suited for use in power management functions, including reverse polarity protection, low voltage rectification, and freewheeling applications in various electronic devices.

Key Features

  • Low Forward Voltage: The diode's low forward voltage drop (Vf) helps in reducing power loss and improving efficiency, which is critical for battery-powered devices.
  • High Current Capability: With a forward current rating of 2 A, this diode can handle significant current, making it suitable for a broad range of applications.
  • Low Reverse Leakage Current: The PMEG4002EL,315 exhibits low leakage current, which minimizes power loss when the diode is in the reverse-biased state.
  • Small Form Factor: Encased in a small SOD882L surface-mount package, it is ideal for space-constrained applications.
  • High Maximum Junction Temperature: The diode can operate at junction temperatures up to 150°C, allowing for usage in high-temperature environments.

Applications

The PMEG4002EL,315 is versatile and can be used in a variety of electronic circuits. Some common applications include:

  • DC-DC converters
  • Power supplies
  • Solar cells
  • Battery charging circuits
  • Automotive applications
  • Portable devices and smartphones

Reliability and Quality

NXP Semiconductors is known for its commitment to quality, and the PMEG4002EL,315 is no exception. It is manufactured using a robust process that ensures high reliability and performance consistency. The diode's construction is RoHS compliant and free from environmentally harmful substances, making it a suitable choice for eco-friendly products.

Whether you are designing a power supply, optimizing the power efficiency of a portable device, or seeking a reliable component for automotive electronics, the PMEG4002EL,315 Schottky barrier diode from NXP is an excellent choice that combines efficiency, compactness, and durability.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
1,180+ 0.0425$ 50.1500$
2,515+ 0.0398$ 100.0970$
3,900+ 0.0385$ 150.1500$
5,590+ 0.0358$ 200.1220$
7,270+ 0.0344$ 250.0880$
9,065+ 0.0331$ 300.0515$
!
Preise unterliegen dem Markt und werden nach Eingang der Bestellung bestätigt.
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Verfügbarkeit: 168,280 Stücke
MOQ: 1180 Stück
Inkrement bestellen : 1 pcs
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