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BC817-40,215

Teil Nr. BC817-40,215
Hersteller Nexperia USA Inc.
Katalog TRANSISTORS
Beschreibung Bipolar Transistors - BJT 45 V, 500 mA NPN general-purpose transistors
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Spezifikationen der Produkte Problem melden?

Hersteller Nexperia
Montageart SMD/SMT
Verpackung / Koffer SOT-23-3
Transistor-Polarität NPN
Konfiguration Single
Collector- Emitter Voltage VCEO Max 45 V
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 5 V
Kollektor-Emitter-Sättigungsspannung 700 mV
Maximum DC Collector Current 500 mA
Pd - Power Dissipation 250 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 65 C
Maximale Betriebstemperatur + 150 C
Serie BC817
Verpackung Cut Tape
Verpackung MouseReel
Verpackung Reel
DC Current Gain hFE Max 250 at 100 mA, 1 V
Höhe 1 mm
Länge 3 mm
Technologie Si
Breite 1.4 mm
Brand Nexperia
DC Collector/Base Gain hfe Min 250 at 100 mA, 1 V, 40 at 500 mA, 1 V
Produkttyp BJTs - Bipolar Transistors
Standard Pack Qty 3000
Subcategory Transistors
Ultra Librarian 3D-Modell Ultra Librarian BC817-40,215 CAD-Modell

Beschreibung

The BC817-40,215 is a high-performance NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors. This small-signal transistor is designed for general-purpose switching and amplification applications. It is a part of NXP's BC817 series, known for their reliability and efficiency in various electronic circuits.

Key Features

  • Transistor Type: NPN - This transistor uses a negative-positive-negative configuration, which is widely used in amplification and switching applications.
  • Package / Case: SOT-23 - The BC817-40,215 comes in a small SOT-23 surface-mount package, making it suitable for high-density PCB designs.
  • Collector-Emitter Voltage (VCEO): 45V - It can handle a maximum collector-emitter voltage of 45V, ensuring stable operation in various circuits.
  • Collector Current (IC): 500mA - With a maximum collector current of 500mA, this transistor can control a significant amount of current for its small size.
  • DC Current Gain (hFE): 250 to 600 - The transistor has a high current gain, making it an excellent choice for amplification purposes.
  • Power Dissipation (Pd): 250mW - It has a decent power dissipation rating, allowing it to manage a fair amount of power without overheating.
  • Operating Temperature Range: -65°C to +150°C - The BC817-40,215 is designed to operate reliably over a wide temperature range.

Applications

The versatility of the BC817-40,215 makes it suitable for a wide range of applications, including:

  • General-purpose switching
  • Signal amplification
  • Driver stages in hi-fi amplifiers and television circuits
  • Power management in portable devices
  • Linear amplification and switching

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the BC817-40,215 is no exception. This component is built to meet the stringent requirements of the electronics industry, ensuring consistent performance and durability for end-users.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
2,385+ 0.0210$ 50.0850$
5,080+ 0.0197$ 100.0760$
7,895+ 0.0190$ 150.0050$
11,300+ 0.0177$ 200.0100$
14,620+ 0.0171$ 250.0020$
18,295+ 0.0164$ 300.0380$
!
Preise unterliegen dem Markt und werden nach Eingang der Bestellung bestätigt.
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 930,900 Stücke
MOQ: 2385 Stück
Inkrement bestellen : 1 pcs
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