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2SCR502EBTL

Teil Nr. 2SCR502EBTL
Hersteller Rohm Semiconductor
Katalog RF Transistors (BJT)
Beschreibung TRANS NPN 30V 0.5A EMT3F / Bipolar (BJT) Transistor NPN 30 V 500 mA 360MHz 150 mW Surface Mount EMT3F (SOT-416FL)
Muster
Rohs-status rohs
ECAD-module
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Spezifikationen der Produkte Problem melden?

Kategorie Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Rohm Semiconductor
Paket Tape & Reel
Transistor Typ NPN
Strom - Kollektor (Ic) (Max) 500 mA
Spannung - Kollektor-Emitter-Durchbruch (Max) 30 V
Vce Sättigung (Max) @ Ib, Ic 300mV @ 10mA, 200mA
Strom - Kollektorabschaltung (Max) 200nA (ICBO)
DC-Stromverstärkung (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V
Leistung - Max 150 mW
Frequenz - Übergang 360MHz
Temperaturbereich - Betrieb 150°C (TJ)
Montage SMD (SMT)
Verpackung / Koffer SC-89, SOT-490
Lieferant Gerätepaket EMT3F (SOT-416FL)
Basis-Produktnummer 2SCR502
MSL-Stufe 1 (Unlimited)
REACH-Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Andere Namen 2SCR502EBTLTR,2SCR502EBTLCT,2SCR502EBTLDKR
Standard-Paket 3,000
Win Source Teilenummer 1037069-2SCR502EBTL
Gefälschte Bedrohung auf dem freien Markt 83 pct.
Ultra Librarian 3D-Modell Ultra Librarian 2SCR502EBTL CAD-Modell

Beschreibung

Overview

The 2SCR502EBTL from Rohm Semiconductor is an RF bipolar junction transistor (BJT) designed for high-frequency small-signal amplification and switching. As an RF transistor, it is typically used in the front end of communication circuits, low-power RF stages, local oscillators, and wideband amplifiers where low noise, reasonable gain, and stable performance over frequency are important. It is supplied in a compact surface-mount package, making it suitable for dense PCBs and portable equipment. Typical operation is at low to medium voltages and currents, consistent with RF and general small-signal use in consumer, industrial, and communication systems. For exact ratings such as VCEO, IC, transition frequency (fT), and gain (hFE), the Rohm datasheet should be consulted before design-in.

Applications

  • Low-power RF amplifiers in ISM band and sub-GHz wireless modules
  • High-frequency signal buffering and gain stages in communication equipment
  • Oscillator and mixer stages in RF front-end circuits
  • General-purpose small-signal amplification in consumer electronics
  • Driver and level-shifting stages in industrial control and instrumentation
  • Test and measurement circuits where stable high-frequency behavior is required

Alternatives & Replacement

Depending on availability, lifecycle status, and exact circuit requirements, it may be necessary to consider alternative RF or small-signal BJTs as replacements for the 2SCR502EBTL. When selecting a substitute, closely compare maximum voltage and current ratings, transition frequency, gain, noise performance, and package style.

Recommended alternatives:

Engineering note: none of the listed alternatives are guaranteed drop-in replacements. Before committing to production, verify pinout, package footprint, polarity, maximum ratings (VCEO, IC, Ptot), RF performance (fT, gain, noise), and timing characteristics against the original 2SCR502EBTL datasheet, and perform bench validation in the target circuit.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
305+ 0.1663$ 50.7215$
735+ 0.1365$ 100.3275$
1,135+ 0.1322$ 150.0470$
1,565+ 0.1280$ 200.3200$
2,025+ 0.1237$ 250.4925$
2,710+ 0.1109$ 300.5390$
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 57,000 Stücke
MOQ: 305 Stück
Inkrement bestellen : 1 pcs
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