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SMUN5311DW1T1G

Teil Nr. SMUN5311DW1T1G
Hersteller ON Semiconductor
Katalog Transistors (BJT) - Arrays, Pre - Biased
Beschreibung Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R / TRANS PREBIAS NPN/PNP SOT363
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Spezifikationen der Produkte Problem melden?

Kategorien Discrete Semiconductor Products
Hersteller ON Semiconductor
Verpackung Reel - TR
Status Active
Transistor-Polarität 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximaler Strom Kollektor 100mA
VCEO Maximale Kollektor-Emitter-Durchbruchsspannung 50V
Widerstand - Basis (R1) (Ohm) 10k
Widerstand - Emitterbasis (R2) (Ohm) 10k
Typische Verstärkung (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Kollektor-Abschaltstrom (Max) 500nA
Maximale Verlustleistung 250mW
Montage SMD (SMT)
Koffer/Paket SC-88/SC70-6/SOT-363
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 115073-SMUN5311DW1T1G
Handelt es sich um ein häufig verwendetes Teil? Yes
Popularität High
Gefälschte Bedrohung auf dem freien Markt 62 pct.
Stand von Angebot und Nachfrage Limited
Familienname SMUN5311DW1
Einführung Datum December 02, 1997
ECCN EAR99
Herkunftsland China
Halogenfrei Compliant
Geschätztes EOL-Datum 2029
Ultra Librarian 3D-Modell Ultra Librarian SMUN5311DW1T1G CAD-Modell

Beschreibung

ON Semiconductor SMUN5311DW1T1G - Dual PNP Transistor

The SMUN5311DW1T1G is a high-performance dual PNP transistor designed and manufactured by ON Semiconductor, a leading name in the semiconductor industry. This device is engineered to offer excellent current gain and saturation voltage, making it an ideal choice for a wide range of applications, including signal processing, power management, and amplification circuits. Its compact surface-mount package allows for efficient use of PCB space, which is critical in modern electronic designs.

Key Features:

  • Transistor Type: Dual PNP Bipolar Junction Transistor (BJT)
  • Configuration: Dual
  • Collector-Emitter Voltage (VCEO): -50V
  • Collector-Base Voltage (VCBO): -60V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -100mA
  • DC Current Gain (hFE): 120 at 10mA, -5V
  • Power Dissipation (Pd): 250mW
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

Package and Quality:

The SMUN5311DW1T1G comes in a compact SOT-363 package, which is also known as SC-88 or SC70-6. This small and thin profile package is ideal for applications where space-saving is a priority. The device is provided in tape and reel packaging, facilitating automated assembly processes and ensuring safe delivery and handling.

Applications:

With its dual PNP transistor design, the SMUN5311DW1T1G is suitable for a variety of electronic applications. It is commonly used in power management solutions, such as voltage regulators and switches, as well as in signal processing tasks, including amplification, buffering, and filtering. Its reliability and efficiency also make it a preferred choice for consumer electronics, portable devices, and industrial control systems.

Quality and Reliability:

ON Semiconductor is committed to delivering high-quality and reliable components. The SMUN5311DW1T1G is no exception and is manufactured under strict quality control standards. It is designed to meet or exceed the requirements of the electronic industry, ensuring performance and reliability in even the most demanding applications.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
110+ 0.4717$ 51.8870$
230+ 0.4418$ 101.6140$
355+ 0.4269$ 151.5495$
505+ 0.3971$ 200.5355$
655+ 0.3821$ 250.2755$
820+ 0.3672$ 301.1040$
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 529,865 Stücke
MOQ: 110 Stück
Inkrement bestellen : 1 pcs
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