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NSVMMUN2212LT1G

Teil Nr. NSVMMUN2212LT1G
Hersteller ON Semiconductor
Katalog Transistors (BJT) - Single, Pre - Biased
Beschreibung TRANS PREBIAS NPN 50V SOT23-3
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Spezifikationen der Produkte Problem melden?

Kategorien Discrete Semiconductor Products
Geschätzte Pruduktionsvorlaufzeit 51 Weeks
Eigenschaften Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Hersteller ON Semiconductor
Paket Reel - TR
Montage Surface Mount
Paket TO-236-3, SC-59, SOT-23-3
Koffer/Paket SOT-23-3 (TO-236)
Familienname NSVMMUN2212
MSL-Stufe 1 (Unlimited)
REACH-Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Andere Teilenummer NSVMMUN2212LT1GOSCT, NSVMMUN2212LT1GOSTR, NSVMMUN2212LT1GOSDKR, NSVMMUN2212LT1G-ND
Menge pro Paket 3000
Gefälschte Bedrohung auf dem freien Markt 91 pct.
Popularität Medium
Stand von Angebot und Nachfrage Limited
Win Source Teilenummer 887712-NSVMMUN2212LT1G
Ultra Librarian 3D-Modell Ultra Librarian NSVMMUN2212LT1G CAD-Modell

Beschreibung

The NSVMMUN2212LT1G, manufactured by ON Semiconductor, is a state-of-the-art semiconductor device designed to offer reliable performance in various electronic applications. This product is a testament to ON Semiconductor's commitment to providing high-quality components that meet the stringent requirements of modern electronic devices.

Key Features

  • Bipolar Junction Transistor (BJT): The NSVMMUN2212LT1G is a BJT, which is a type of transistor that uses both electron and hole charge carriers. This characteristic allows for amplification and switching capabilities that are essential in many electronic circuits.
  • Surface-Mount Package: This component comes in a compact SOT-23 package, ideal for space-constrained applications. Its surface-mount technology (SMT) design allows for efficient assembly and a smaller footprint on printed circuit boards (PCBs).
  • Low Voltage Operation: The NSVMMUN2212LT1G is optimized for low voltage operation, making it suitable for battery-powered and portable devices where power conservation is critical.
  • High Current Gain: With a high current gain (hFE), this transistor can amplify weak signals to higher levels, which is crucial for applications such as audio amplification and signal processing.
  • Automotive Qualification: This product is qualified for use in automotive applications, ensuring robust performance under harsh conditions and meeting the rigorous standards of the automotive industry.

Applications

The NSVMMUN2212LT1G is suitable for a wide range of applications, including but not limited to:

  • Signal amplification in audio and communication devices
  • Switching applications in power management systems
  • Driver circuits in LED lighting solutions
  • Control circuits in automotive electronics

Environmental and Quality Standards

ON Semiconductor's NSVMMUN2212LT1G is designed to meet environmental standards, featuring a lead-free and RoHS-compliant construction. This ensures that the product is environmentally friendly and adheres to international regulations regarding hazardous substances.

In conclusion, the NSVMMUN2212LT1G from ON Semiconductor is a versatile and reliable component that serves as a fundamental building block in a myriad of electronic circuits. Its robust design and compliance with automotive and environmental standards make it an excellent choice for designers and engineers looking for a high-performance BJT.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
35+ 1.4552$ 50.9320$
85+ 1.1941$ 101.4985$
130+ 1.1567$ 150.3710$
180+ 1.1194$ 201.4920$
235+ 1.0821$ 254.2935$
310+ 0.9702$ 300.7620$
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 66,000 Stücke
MOQ: 35 Stück
Inkrement bestellen : 1 pcs
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