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NSIC2020JBT3G

Teil Nr. NSIC2020JBT3G
Hersteller ON Semiconductor
Katalog PMIC - Current Regulation/Management
Beschreibung IC CURRENT REGULATOR SMB
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Spezifikationen der Produkte Problem melden?

Kategorie Integrated Circuits (ICs) - Power Management (PMIC) - Current Regulation/Management
Mfr onsemi
Serie -
Paket Tape & Reel
Produktstatus Active
Funktion Current Regulator
Sensorik Methode High/Low-Side
Genauigkeit -
Spannung - Eingang 120V
Strom - Ausgang 20mA
Temperaturbereich - Betrieb -55°C ~ 175°C
Montage Typ Surface Mount
Verpackung / Koffer DO-214AA, SMB
Lieferant Gerätepaket SMB
Basis-Produktnummer NSIC2020
MSL-Stufe 1 (Unlimited)
REACH-Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Teilenummer 1368339-NSIC2020JBT3G
Gefälschte Bedrohung auf dem freien Markt 60 pct.
Ultra Librarian 3D-Modell Ultra Librarian NSIC2020JBT3G CAD-Modell

Beschreibung

ON Semiconductor NSIC2020JBT3G Silicon Carbide Schottky Diode

The ON Semiconductor NSIC2020JBT3G is a state-of-the-art Silicon Carbide (SiC) Schottky diode that offers superior switching performance and higher reliability compared to Silicon devices. This diode is specifically designed to meet the needs of high-efficiency, high-frequency applications where power density and minimal power loss are critical.

This robust component features a 600V repetitive reverse voltage and a 20A continuous forward current, making it an ideal choice for power supply designs in a variety of industry sectors, including renewable energy, automotive, and industrial automation. The NSIC2020JBT3G is housed in a TO-263 (D2PAK) package, which provides excellent thermal performance and is suitable for high-power density applications.

One of the key advantages of the NSIC2020JBT3G diode is its zero reverse recovery charge (Qrr), which greatly reduces switching losses when the diode transitions from conducting to blocking state. This characteristic makes it perfect for high-frequency power converters, thus improving overall system efficiency and energy savings.

The diode also boasts a low forward voltage drop (Vf), which contributes to reduced conduction losses and enables operations at lower temperatures, further enhancing the reliability and longevity of the device. Its SiC material properties allow for much higher junction temperature capabilities than traditional silicon diodes, ensuring stable performance even under extreme conditions.

ON Semiconductor's commitment to quality and environmental sustainability is evident in the NSIC2020JBT3G, which is RoHS compliant and halogen-free. This commitment ensures that the product is not only high-performing but also adheres to current environmental regulations and standards.

In summary, the NSIC2020JBT3G from ON Semiconductor is a high-efficiency, reliable SiC Schottky diode that is well-suited for demanding applications requiring fast switching, low losses, and high thermal resilience. Its advanced features and robust design make it an excellent choice for designers looking to enhance system performance and reliability.

To learn more about the NSIC2020JBT3G or to find detailed specifications, please visit ON Semiconductor's official website or contact their customer support team for further assistance.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
135+ 0.3767$ 50.8545$
325+ 0.3091$ 100.4575$
505+ 0.2994$ 151.1970$
695+ 0.2898$ 201.4110$
895+ 0.2801$ 250.6895$
1,195+ 0.2511$ 300.0645$
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MOQ: 135 Stück
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