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Teil Nr. FDP12N50
Hersteller ON Semiconductor
Katalog FETs - Single
Beschreibung N-Channel MOSFET 500V, 11.5A, 0.65Ω | MOSFET N-CH 500V 11.5A TO-220
Muster
Rohs-status rohs
ECAD-module
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Kategorien Discrete Semiconductor Products
Hersteller ON Semiconductor
Verpackung Tube
Transistor-Polarität N-Channel
Technologie MOSFET
Vds - Drain-Source-Durchbruchsspannung 500V
Id - Kontinuierlicher Drainstrom 11.5A
Antriebsspannung (Max Rds On, Min Rds On) 10V
Rds Ein (Maximum) bei Id, Vgs 650mOhm at 6A, 10V
Gate-Source-Spannung(th) (Maximum) bei Id 5V at 250μA
Gate-Ladung (Qg) (Maximum) bei Vgs 30nC at 10V
Gate Source Spannung (Maximum) ±30V
Eingangskapazität (Ciss) (Maximum) bei Vds 1315pF at 25V
Verlustleistung (maximal) 165W
Temperaturbereich - Betrieb -55°C ~ 150°C
Montageart Through Hole
Lieferant Gerätepaket TO-220-3
Hersteller Paket TO-220-3
Hersteller Packmenge 1,000
MSL-Stufe 1 (Unlimited)
Win Source Teilenummer 1173868-FDP12N50
Hersteller Homepage www.fairchildsemi.com
Rohmaterialien Based on silicon element (Si) ; Blue-grey metallic luster
Popularität Medium
Gefälschte Bedrohung auf dem freien Markt 54 pct.
Stand von Angebot und Nachfrage Limited
Ultra Librarian 3D-Modell Ultra Librarian FDP12N50 CAD-Modell

Beschreibung

FDP12N50 MOSFET Overview

The FDP12N50 is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is engineered to deliver superior power efficiency and reliability for a wide range of applications. The FDP12N50 is particularly suited for high-power switching and power supply systems where energy efficiency is paramount.

Key Features

  • High Current Capability: The FDP12N50 is capable of handling continuous drain currents up to 12A, making it suitable for high-power applications.
  • High Voltage Tolerance: With a drain-to-source voltage (Vdss) of 500V, this MOSFET can efficiently manage high voltage operations, providing a wide safety margin for electrical devices.
  • Low On-Resistance: The low on-state resistance (Rds(on)) of the FDP12N50 minimizes conduction losses, ensuring better power efficiency and thermal performance.
  • Fast Switching Speed: Fast switching capabilities reduce transition losses and improve the overall efficiency of the device in high-frequency applications.
  • Robust Thermal Characteristics: The FDP12N50 comes in a TO-220 package, which offers excellent heat dissipation properties to maintain stability under high thermal conditions.

Applications

The versatility of the FDP12N50 MOSFET makes it suitable for a variety of applications, including:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor drives
  • Inverters
  • Lighting systems
  • Industrial power systems

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The FDP12N50 MOSFET is subjected to rigorous testing and quality control measures to ensure it meets the high standards expected from ON Semiconductor products. Reliability is a cornerstone of this device's design, ensuring a long operational lifespan even under strenuous conditions.

Environmental Compliance

The FDP12N50 is designed with environmental considerations in mind. It complies with RoHS directives, which means it is free from hazardous substances, making it a safer choice for both the environment and consumers.

In summary, the FDP12N50 from ON Semiconductor is a robust, efficient, and reliable solution for designers looking to optimize their power management systems with a high-performance N-Channel MOSFET.

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