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PMEG3030EP,115

Teil Nr. PMEG3030EP,115
Hersteller NXP
Katalog Diodes, Rectifiers - Single
Beschreibung DIODE SCHOTTKY 30V 3A SOD128
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Kategorien Discrete Semiconductor Products
Hersteller Nexperia USA Inc.
Verpackung Reel - TR
Status Active
Diode Typ Schottky
Spannung - DC Rückwärts (Vr) (Max) 30V
Strom - Durchschnittlich gleichgerichtet (Io) 3A
Spannung - Vorwärts (Vf) (Max) @ If 360mV @ 3A
Geschwindigkeit (Frequenz) Fast Recovery = 200mA (Io)
Strom - Rückwärtsleckstrom @ Vr 5mA @ 30V
Kapazität @ Vr, F 470pF @ 1V, 1MHz
Montage SMD (SMT)
Koffer/Paket CFP5
Betriebstemperatur - Verbindungsstelle 150°C (Max)
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 128902-PMEG3030EP,115
Rohmaterialien Based on silicon element (Si) ; Blue-grey metallic luster
Popularität Medium
Gefälschte Bedrohung auf dem freien Markt 32 pct.
Stand von Angebot und Nachfrage Balance
ECAD-Modelle Contact us to download
Sicherheitsdatenblatt (MSDS) Get Access
Ultra Librarian 3D-Modell Ultra Librarian PMEG3030EP,115 CAD-Modell

Beschreibung

NXP PMEG3030EP,115 Schottky Barrier Rectifier Diode

The NXP PMEG3030EP,115 is a highly efficient, low power loss Schottky barrier rectifier diode designed to meet the needs of a wide range of electronic applications. This surface-mounted diode is a part of NXP's portfolio of energy-saving, high-performance components that cater to the increasing demand for power efficiency in modern electronic circuits.

With its compact SOD-128 package, the PMEG3030EP,115 is optimized for automated manufacturing processes, making it an ideal choice for high-density circuit designs. It boasts a reverse voltage of 30V and a forward current of 3A, ensuring that it can handle moderate power requirements with ease. The low forward voltage drop characteristic of Schottky diodes is well-represented in this component, which minimizes energy loss during conduction and enhances overall circuit efficiency.

One of the key features of the PMEG3030EP,115 is its low reverse leakage current, which reduces power consumption when the diode is in the blocking state. This characteristic is particularly beneficial in battery-powered devices, where energy conservation is critical. Additionally, the fast switching capability of this diode makes it suitable for high-frequency applications, contributing to reduced switching losses and improved performance in power supply circuits.

The robust construction of the NXP PMEG3030EP,115 ensures that it can withstand the thermal and mechanical stresses commonly encountered in electronic devices. It has a wide operating temperature range, which allows it to perform reliably in various environmental conditions. The diode is also characterized by its low thermal resistance, enabling efficient heat dissipation and contributing to the longevity of the device.

Applications for the PMEG3030EP,115 include polarity protection, low voltage rectification, and freewheeling in a variety of electronic products such as portable devices, power management systems, and automotive modules. Its combination of efficiency, reliability, and compact form factor makes it a versatile component for designers looking to optimize their power circuits without compromising on space or performance.

In summary, the NXP PMEG3030EP,115 Schottky barrier rectifier diode is a high-quality, energy-efficient solution for modern electronic designs that require compact, high-performance power components.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
115+ 0.4366$ 50.2090$
280+ 0.3583$ 100.3240$
435+ 0.3471$ 150.9885$
600+ 0.3359$ 201.5400$
770+ 0.3247$ 250.0190$
1,035+ 0.2911$ 301.2885$
!
Preise unterliegen dem Markt und werden nach Eingang der Bestellung bestätigt.
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 90,000 Stücke
MOQ: 115 Stück
Inkrement bestellen : 1 pcs
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