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DMMT3906W-7-F

Teil Nr. DMMT3906W-7-F
Hersteller Diodes Incorporated
Katalog Transistors (BJT) - Arrays
Beschreibung TRANS 2PNP 40V 0.2A SOT363
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Spezifikationen der Produkte Problem melden?

Kategorien Discrete Semiconductor Products
Hersteller Diodes Incorporated
Verpackung Reel - TR
Status Active
Transistor-Polarität 2 PNP (Dual) Matched Pair
Maximaler Strom Kollektor 200mA
VCEO Maximale Kollektor-Emitter-Durchbruchsspannung 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Typische Verstärkung (hFE) (Min) 100 @ 10mA, 1V
Maximale Verlustleistung 200mW
Frequenz - Übergang 250MHz
Temperaturbereich - Betrieb -65°C to 150°C (TJ)
Montage SMD (SMT)
Koffer/Paket SOT-363
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 014400-DMMT3906W-7-F
Familienname DMMT3906W
Einführung Datum June 24, 2002
ECCN EAR99
Herkunftsland China
Halogenfrei Compliant
Geschätztes EOL-Datum 2026
Handelt es sich um ein häufig verwendetes Teil? Yes
Popularität High
Gefälschte Bedrohung auf dem freien Markt 37 pct.
Stand von Angebot und Nachfrage Sufficient
Ultra Librarian 3D-Modell Ultra Librarian DMMT3906W-7-F CAD-Modell

Beschreibung

Diodes Incorporated DMMT3906W-7-F Dual PNP Transistor

The DMMT3906W-7-F from Diodes Incorporated is a high-performance, dual PNP transistor designed for a variety of applications that require small signal amplification and switching. This component is part of Diodes Incorporated's extensive portfolio of semiconductor products, known for their reliability and precision. The DMMT3906W-7-F is housed in a compact SOT-363 package, making it ideal for space-constrained applications.

This dual PNP transistor offers a collector-emitter voltage (Vceo) of -40V and a collector current (Ic) of -200mA, which ensures efficient operation in a range of electronic circuits. The device features a continuous collector current of -200mA and a power dissipation of 300mW, allowing it to handle moderate power applications with ease.

The DMMT3906W-7-F boasts a high gain bandwidth product (fT) of 250MHz, providing excellent frequency response for amplification purposes. This characteristic makes it suitable for RF and high-speed signal processing applications where bandwidth is a critical factor.

With its integrated dual transistor configuration, the DMMT3906W-7-F saves valuable board space and reduces component count, which can lead to cost savings in mass production. The device's matched pair of transistors also simplifies designs by providing better thermal tracking and performance consistency.

Furthermore, the DMMT3906W-7-F offers a low saturation voltage, which minimizes power loss and improves efficiency, particularly in low-voltage applications. The device is also characterized by its low noise figure, which is essential for high-fidelity audio amplifiers and sensitive signal processing circuits.

Diodes Incorporated ensures that the DMMT3906W-7-F meets stringent quality and performance standards, making it a reliable choice for designers and engineers. Whether you're working on consumer electronics, industrial control systems, or medical devices, this dual PNP transistor is an excellent building block for your circuit designs.

In summary, the DMMT3906W-7-F is a versatile and efficient solution for designers looking to implement dual PNP transistors in their electronic projects. Its small form factor, combined with its high performance and reliability, makes it an invaluable component in the semiconductor industry.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
625+ 0.0805$ 50.3125$
1,330+ 0.0754$ 100.2820$
2,060+ 0.0729$ 150.1740$
2,950+ 0.0678$ 200.0100$
3,835+ 0.0652$ 250.0420$
4,785+ 0.0627$ 300.0195$
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 70,519 Stücke
MOQ: 625 Stück
Inkrement bestellen : 1 pcs
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