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DDTD142JU-7-F

Teil Nr. DDTD142JU-7-F
Hersteller Diodes Incorporated
Katalog Transistors (BJT) - Single, Pre - Biased
Beschreibung TRANS PREBIAS NPN 200MW SOT323
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Spezifikationen der Produkte Problem melden?

Kategorien Discrete Semiconductor Products
Hersteller Diodes Incorporated
Verpackung Reel - TR
Status Active
Transistor-Polarität NPN - Pre-Biased
Maximaler Strom Kollektor 500mA
VCEO Maximale Kollektor-Emitter-Durchbruchsspannung 50V
Widerstand - Basis (R1) (Ohm) 470
Widerstand - Emitterbasis (R2) (Ohm) 10k
Typische Verstärkung (hFE) (Min) 56 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Kollektor-Abschaltstrom (Max) 500nA
Frequenz - Übergang 200MHz
Maximale Verlustleistung 200mW
Montage SMD (SMT)
Koffer/Paket SOT-323
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 1032785-DDTD142JU-7-F
Popularität Medium
Gefälschte Bedrohung auf dem freien Markt 59 pct.
Stand von Angebot und Nachfrage Balance
Anwendungsbereich Used in Automotive, Industrial, Power Management, Consumer Electronics, Portable Devices
Ultra Librarian 3D-Modell Ultra Librarian DDTD142JU-7-F CAD-Modell

Beschreibung

The DDTD142JU-7-F is a high-performance, surface-mount PNP transistor from Diodes Incorporated, a leading manufacturer in the semiconductor industry. This device is designed to offer a compact and efficient solution for a wide range of electronic applications. The transistor is housed in an ultra-small SOT-323 package, making it ideal for space-constrained applications.

Key Features

  • Low VCE(sat): The DDTD142JU-7-F boasts a low collector-emitter saturation voltage, which enhances the overall efficiency of the device by reducing power loss during operation.
  • High Current Gain: With a high current gain (hFE), this transistor is capable of amplifying electrical signals effectively, making it suitable for amplification applications.
  • Complementary NPN Type Available: For design flexibility, a complementary NPN type transistor is available, allowing for the implementation of push-pull configurations and other circuit designs that require both PNP and NPN transistors.
  • RoHS Compliant: The DDTD142JU-7-F meets the requirements of the RoHS directive, making it suitable for use in environmentally sensitive applications.

Applications

The versatile nature of the DDTD142JU-7-F makes it suitable for a variety of applications, including but not limited to:

  • Power Management Circuits
  • Signal Amplification
  • Switching Applications
  • Consumer Electronics
  • Telecommunications
  • Computing Devices

Reliability and Performance

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The DDTD142JU-7-F is manufactured using state-of-the-art processes, ensuring consistent performance and durability. It is designed to withstand the demanding conditions of commercial and industrial environments, providing a reliable solution for designers and engineers.

Conclusion

The DDTD142JU-7-F PNP transistor from Diodes Incorporated is a testament to the company's dedication to innovation and quality. Its compact form factor, low power consumption, and high current gain make it an excellent choice for a multitude of electronic applications. The availability of a complementary NPN type further enhances its versatility, making it a valuable component in any electronic component inventory.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
1,165+ 0.0430$ 50.0950$
2,835+ 0.0353$ 100.0755$
4,390+ 0.0342$ 150.1380$
6,045+ 0.0331$ 200.0895$
7,815+ 0.0320$ 250.0800$
10,455+ 0.0287$ 300.0585$
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 2,369 Stücke
MOQ: 1165 Stück
Inkrement bestellen : 1 pcs
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Versandinformationen

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