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DDTC114WE-7-F

Teil Nr. DDTC114WE-7-F
Hersteller Diodes Incorporated
Katalog Transistors (BJT) - Single, Pre - Biased
Beschreibung TRANS PREBIAS NPN 150MW SOT523
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Kategorien Discrete Semiconductor Products
Hersteller Diodes Incorporated
Verpackung Reel - TR
Status Active
Transistor-Polarität NPN - Pre-Biased
Maximaler Strom Kollektor 100mA
VCEO Maximale Kollektor-Emitter-Durchbruchsspannung 50V
Widerstand - Basis (R1) (Ohm) 10k
Widerstand - Emitterbasis (R2) (Ohm) 4.7k
Typische Verstärkung (hFE) (Min) 24 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Kollektor-Abschaltstrom (Max) 500nA
Frequenz - Übergang 250MHz
Maximale Verlustleistung 150mW
Montage SMD (SMT)
Koffer/Paket SOT-523
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 101160-DDTC114WE-7-F
Rohmaterialien Based on silicon element (Si) ; Blue-grey metallic luster
Popularität Medium
Gefälschte Bedrohung auf dem freien Markt 29 pct.
Stand von Angebot und Nachfrage Balance
ECAD-Modelle Contact us to download
Sicherheitsdatenblatt (MSDS) Get Access
Ultra Librarian 3D-Modell Ultra Librarian DDTC114WE-7-F CAD-Modell

Beschreibung

Diodes Incorporated DDTC114WE-7-F NPN Pre-Biased Transistor

The DDTC114WE-7-F from Diodes Incorporated is a high-performance, NPN pre-biased transistor that simplifies circuit design by integrating the biasing resistors. This small signal transistor is designed for use in various applications, including switching and amplification in consumer electronics, industrial, and telecommunications equipment.

Key Features

  • Pre-Biased Configuration: Comes with built-in biasing resistors, which reduces component count and simplifies circuit layout.
  • Surface-Mount Package: Encased in a small SOT-323 (SC-70) package, making it suitable for high-density PCB designs.
  • Energy Efficient: Features low saturation voltage and high current gain, which enhances power efficiency in electronic circuits.
  • RoHS Compliant: Manufactured with environmentally friendly materials, complying with RoHS standards for reduced environmental impact.

Electrical Characteristics

  • Collector-Emitter Voltage (Vceo): Capable of withstanding up to 50V, providing a good margin for voltage spikes and surges in circuits.
  • Collector Current (Ic): Supports a continuous collector current of up to 100mA, suitable for driving small loads.
  • Resistor Ratios: Features resistor ratios of R1/R2 = 10KΩ/10KΩ, offering balanced biasing for stable operation.
  • Power Dissipation (Pd): Rated for a maximum power dissipation of 150mW, ensuring reliable performance under typical operating conditions.

Applications

The DDTC114WE-7-F is versatile and can be used in a wide array of applications. Its compact size and integrated bias resistors make it an ideal choice for:

  • Load/relay drivers
  • Logic level shifters
  • Signal processing
  • Power management functions

With its robust design and integrated features, the DDTC114WE-7-F is a practical component for designers looking to optimize their circuit designs with reliable and efficient transistor solutions. Diodes Incorporated's commitment to quality ensures that this pre-biased transistor will meet the rigorous demands of modern electronic devices.

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