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BC847PN-7-F

Teil Nr. BC847PN-7-F
Hersteller Diodes Incorporated
Katalog Transistors (BJT) - Arrays
Beschreibung TRANS NPN/PNP 45V 0.1A SOT363
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Spezifikationen der Produkte Problem melden?

Kategorien Discrete Semiconductor Products
Hersteller Diodes Incorporated
Verpackung Reel - TR
Status Active
Transistor-Polarität NPN, PNP
Maximaler Strom Kollektor 100mA
VCEO Maximale Kollektor-Emitter-Durchbruchsspannung 45V
Max Vce (sat) 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Kollektor-Abschaltstrom (Max) 15nA (ICBO)
Typische Verstärkung (hFE) (Min) 200 @ 2mA, 5V / 220 @ 2mA, 5V
Maximale Verlustleistung 200mW
Frequenz - Übergang 300MHz, 200MHz
Temperaturbereich - Betrieb -65°C to 150°C (TJ)
Montage SMD (SMT)
Koffer/Paket SOT-363
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 011128-BC847PN-7-F
Rohmaterialien Based on silicon element (Si) ; Blue-grey metallic luster
Popularität Medium
Gefälschte Bedrohung auf dem freien Markt 28 pct.
Stand von Angebot und Nachfrage Balance
ECAD-Modelle Contact us to download
Sicherheitsdatenblatt (MSDS) Get Access
Ultra Librarian 3D-Modell Ultra Librarian BC847PN-7-F CAD-Modell

Beschreibung

The BC847PN-7-F is a high-quality bipolar (BJT) transistor product from Diodes Incorporated, known for its reliability and efficiency in various electronic applications. This small-signal transistor is a versatile component designed for use in general-purpose amplification and switching applications.

Key Features:

  • Type: NPN/PNP Bipolar Transistor (BJT)
  • Package: SOT-363, a compact surface-mount package that is suitable for automated assembly processes and space-constrained applications.
  • Configuration: Dual, with one NPN and one PNP transistor in a single package, offering design flexibility and saving board space.
  • Collector-Emitter Voltage (VCEO): 45V for NPN and PNP, providing a good voltage rating for a range of applications.
  • Collector Current (IC): Up to 100mA, allowing for sufficient current handling capability for small-signal tasks.
  • DC Current Gain (hFE): High hFE at 200-400 for the NPN and 160-320 for the PNP, ensuring excellent current amplification.
  • Transition Frequency (fT): 100MHz for NPN and 250MHz for PNP, enabling fast switching and amplification in high-frequency circuits.
  • Power Dissipation (Pd): 250mW, providing a good balance between power handling and compactness.
  • RoHS Compliant: Yes, ensuring environmental and regulatory compliance for global use.

Applications:

The BC847PN-7-F transistor is suitable for a wide range of applications, including but not limited to:

  • General-purpose switching and amplification
  • Audio amplifiers
  • Signal processing
  • Driver stages in hi-fi amplifiers and television circuits
  • Control systems
  • Portable and consumer electronics

Quality and Reliability:

Diodes Incorporated is committed to providing high-quality and reliable components. The BC847PN-7-F is built to stringent quality control standards, ensuring consistent performance and durability for professional, industrial, and hobbyist applications alike.

Overall, the BC847PN-7-F from Diodes Incorporated is a versatile and reliable choice for designers and engineers looking for a dual NPN/PNP transistor solution that combines performance with compact packaging.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
1,070+ 0.0469$ 50.1830$
2,280+ 0.0439$ 100.0920$
3,540+ 0.0424$ 150.0960$
5,065+ 0.0395$ 200.0675$
6,580+ 0.0380$ 250.0400$
8,220+ 0.0365$ 300.0300$
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 93,000 Stücke
MOQ: 1070 Stück
Inkrement bestellen : 1 pcs
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