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2N7002-7-F

Teil Nr. 2N7002-7-F
Hersteller Diodes Incorporated
Katalog Transistors - FETs, MOSFETs - RF
Beschreibung MOSFET N-CH 60V 115MA SOT23-3
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Spezifikationen der Produkte Problem melden?

Kategorien Discrete Semiconductor Products
Hersteller Diodes Incorporated
Verpackung Reel - TR
Status Active
Polarität N-Channel
Technologie MOSFET
Drain-Source-Durchbruchsspannung 60V
Kontinuierlicher Drainstrom bei 25°C 115mA (Ta)
Antriebsspannung (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Schwellenspannung 2.5V @ 250μA
Maximale Eingangskapazität 50pF @ 25V
Maximale Gate-Source-Spannung ±20V
Verlustleistung (Max) 370mW (Ta)
Maximale Rds Ein bei Id,Vgs 7.5 Ohm @ 50mA, 5V
Temperaturbereich - Betrieb -55°C to 150°C (TJ)
Montage SMD (SMT)
Koffer/Paket SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 005717-2N7002-7-F
Familienname 2N7002
Einführung Datum October 16, 1997
ECCN EAR99
Herkunftsland China
Halogenfrei Compliant
Geschätztes EOL-Datum 2025
Handelt es sich um ein häufig verwendetes Teil? Yes
Popularität High
Gefälschte Bedrohung auf dem freien Markt 47 pct.
Stand von Angebot und Nachfrage Sufficient
Anwendungsbereich Used in Motor Drive & Control, Power Management, Defence, Military & Aerospace
Ultra Librarian 3D-Modell Ultra Librarian 2N7002-7-F CAD-Modell

Beschreibung

Product Overview: 2N7002-7-F by Diodes Incorporated

The 2N7002-7-F is a high-performance, small signal N-Channel MOSFET, designed and manufactured by Diodes Incorporated. It is a versatile and reliable component suitable for a wide range of applications, from power management to switching. The 2N7002-7-F is known for its efficiency and low on-resistance, making it an ideal choice for designers looking to optimize their circuit designs for both performance and power consumption.

Key Features

  • Device Type: N-Channel MOSFET
  • Configuration: Single
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 200mA
  • RDS(on): Very low at 7.5Ω max
  • Package: SOT-23
  • RoHS: Compliant with RoHS standards

Applications

The 2N7002-7-F is a versatile component that can be used in various applications, including but not limited to:

  • Power Management
  • Load Switch
  • Switching Circuits
  • Motor Control
  • DC-DC Converters
  • Computer Peripherals

Performance and Quality

Diodes Incorporated has designed the 2N7002-7-F with performance and reliability in mind. The MOSFET's low on-resistance ensures minimal power loss during operation, which is critical for energy-sensitive applications. Additionally, its ability to handle a continuous drain current of up to 200mA makes it suitable for moderate power tasks.

Quality is a hallmark of Diodes Incorporated, and the 2N7002-7-F is no exception. It is RoHS compliant, ensuring that it meets the latest environmental standards and is free from hazardous substances. The device is provided in the industry-standard SOT-23 package, which is known for its compact footprint and ease of integration into various circuit designs.

Conclusion

The 2N7002-7-F from Diodes Incorporated is a reliable and efficient solution for designers looking to incorporate a high-performance N-Channel MOSFET into their electronic circuits. With its low on-resistance, high voltage capability, and compliance with environmental standards, it stands as a smart choice for a multitude of electronic applications.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
1,630+ 0.0307$ 50.0410$
3,475+ 0.0288$ 100.0800$
5,400+ 0.0278$ 150.1200$
7,725+ 0.0259$ 200.0775$
10,045+ 0.0249$ 250.1205$
12,555+ 0.0239$ 300.0645$
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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Verfügbarkeit: 990,000 Stücke
MOQ: 1630 Stück
Inkrement bestellen : 1 pcs
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