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HBDM60V600W-7

Teil Nr. HBDM60V600W-7
Hersteller Diodes Incorporated
Katalog Transistors (BJT) - Arrays
Beschreibung TRANS NPN/PNP 65V/60V SOT363
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Kategorien Discrete Semiconductor Products
Hersteller Diodes Incorporated
Verpackung Reel - TR
Status Active
Transistor-Polarität NPN, PNP
Maximaler Strom Kollektor 500mA, 600mA
VCEO Maximale Kollektor-Emitter-Durchbruchsspannung 65V, 60V
Max Vce (sat) 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Kollektor-Abschaltstrom (Max) 100nA
Typische Verstärkung (hFE) (Min) 100 @ 100mA, 1V / 100 @ 150mA, 10V
Maximale Verlustleistung 200mW
Frequenz - Übergang 100MHz
Temperaturbereich - Betrieb -55°C to 150°C (TJ)
Montage SMD (SMT)
Koffer/Paket SOT-363
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Win Source Teilenummer 067820-HBDM60V600W-7
Rohmaterialien Based on silicon element (Si) ; Blue-grey metallic luster
Popularität Medium
Gefälschte Bedrohung auf dem freien Markt 36 pct.
Stand von Angebot und Nachfrage Limited
ECAD-Modelle Contact us to download
Sicherheitsdatenblatt (MSDS) Get Access
Ultra Librarian 3D-Modell Ultra Librarian HBDM60V600W-7 CAD-Modell

Beschreibung

Introducing the HBDM60V600W-7 MOSFET from Diodes Incorporated

The HBDM60V600W-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficiency and power handling capabilities that are well-suited for a wide range of applications, including power management, load switching, and motor control in consumer, industrial, and automotive environments.

Key Features

  • Voltage and Current: The device operates at 60V drain-source voltage (VDS) with a continuous drain current (ID) of 600mA, making it capable of handling moderate power levels in compact designs.
  • Low On-Resistance: With an RDS(on) as low as 1.2Ω at VGS=10V, this MOSFET ensures minimal power loss during operation, enhancing the overall efficiency of the system.
  • High-Speed Switching: The HBDM60V600W-7 is designed for fast switching applications, thanks to its low input and output capacitance.
  • Thermal Performance: Housed in a small SOT-323 package, the MOSFET offers excellent thermal performance, ensuring reliability even under high switching frequencies and current loads.
  • Lead-Free and RoHS Compliant: In line with environmental standards, this product is completely lead-free and RoHS compliant, minimizing the ecological impact and meeting global regulatory requirements.

Applications

The versatility of the HBDM60V600W-7 allows it to be integrated into various circuits and systems. Some of the typical applications include:

  • DC/DC converters
  • Battery management systems
  • Power supply switches
  • Load/relay drivers
  • Motor control circuits

Quality and Reliability

Diodes Incorporated is committed to providing products that meet the highest standards of quality and reliability. The HBDM60V600W-7 MOSFET is no exception, as it has undergone rigorous testing and quality control measures to ensure it meets the stringent requirements of the industry.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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