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DMP3017SFGQ-7

Teil Nr. DMP3017SFGQ-7
Hersteller Diodes Incorporated
Katalog Transistors - FETs, MOSFETs - RF
Beschreibung 30V P-CHANNEL ENHANCEMENT MODE MOSFET
Datenblatt
Muster
Rohs-status rohs
ECAD-module
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Kategorien Discrete Semiconductor Products
Hersteller Diodes Incorporated
Verpackung Reel - TR
Kanal Typ Typ P
Technologie MOSFET
Drain Source Spannung 30V
Strom - kontinuierlicher Drain (Id) @ 25°C 11.5A (Ta)
Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate-Ladung (Qg) (Maximum) @ Vgs 41nC @ 10V
Eingangskapazität (Ciss) (Maximum) @ Vds 2246pF @ 15V
Vgs (Maximum) ±25V
Verlustleistung (maximal) 940mW (Ta)
Rds Ein (Maximum) @ Id, Vgs 10 mOhm @ 11.5A, 10V
Betriebstemperaturbereich -55°C ~ 150°C (TJ)
Montage SMD
Hersteller Paket PowerDI3333-8
Paket 8-PowerWDFN
Win Source Teilenummer 1168267-DMP3017SFGQ-7
Hersteller Homepage www.diodes.com
Zustand der Lagerung Dry storage cabinet & Humidity protection package
Popularität Medium
Gefälschte Bedrohung auf dem freien Markt 70 pct.
Stand von Angebot und Nachfrage Limited
Familienname DMP3017SFGQ
Einführung Datum September 09, 2015
Halogenfrei Compliant
Geschätztes EOL-Datum 2030
Ultra Librarian 3D-Modell Ultra Librarian DMP3017SFGQ-7 CAD-Modell

Beschreibung

Introducing the DMP3017SFGQ-7 MOSFET from Diodes Incorporated

The DMP3017SFGQ-7 is a cutting-edge, P-Channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is a testament to Diodes Incorporated's commitment to delivering energy-efficient, compact, and reliable components that cater to a wide range of power management applications.

Constructed with advanced trench technology, the DMP3017SFGQ-7 boasts an ultra-low on-resistance (RDS(on)), which significantly reduces conduction losses and enhances overall device efficiency. This feature makes it an ideal choice for high-performance applications where minimizing power loss is crucial.

The device is encapsulated in a robust PowerDI3333-8 package, which not only ensures a compact footprint but also provides excellent thermal performance. This packaging technology allows the DMP3017SFGQ-7 to operate reliably even under high current conditions, making it suitable for a diverse range of applications, including load switch, power management, and battery protection circuits.

Key specifications of the DMP3017SFGQ-7 include:

  • VDS (Drain-Source Voltage): -30V
  • ID (Continuous Drain Current): -6.3A
  • RDS(on) (Typical On-Resistance): 24mΩ at VGS = -10V
  • Low threshold voltage (VGS(th))
  • High power and current handling capability

With its low threshold voltage, the DMP3017SFGQ-7 ensures a fast and efficient switching performance, which is essential for modern electronic devices that demand quick response times. Additionally, its high power and current handling capability allow it to meet the stringent requirements of today's high-density circuit designs.

The DMP3017SFGQ-7 also includes built-in protection features such as over-temperature and over-current protection, which safeguard the device and the system it is a part of from potential damage due to abnormal operating conditions.

In summary, the DMP3017SFGQ-7 from Diodes Incorporated represents a remarkable blend of performance, efficiency, and reliability, making it a superior choice for designers and engineers looking to optimize their power management solutions.

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Preise und Bestellung

Menge Preis pro Einheit Ext. Preis
75+ 0.6985$ 52.3875$
175+ 0.5732$ 100.3100$
275+ 0.5553$ 152.7075$
375+ 0.5374$ 201.5250$
485+ 0.5194$ 251.9090$
645+ 0.4657$ 300.3765$
* Die Preise verstehen sich exklusive Versandkosten und Steuern. Die Versandkosten werden an der Kasse berechnet.
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MOQ: 75 Stück
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